High Performance Bottom-Gate-Type Amorphous InGaZnO Flexible Transparent Thin-Film Transistors Deposited on PET Substrates at Low Temperature

标题
High Performance Bottom-Gate-Type Amorphous InGaZnO Flexible Transparent Thin-Film Transistors Deposited on PET Substrates at Low Temperature
作者
关键词
Bending stability, flexible polyethylene terephthalate substrate, InGaZnO channel layer, magnetron cosputter system, flexible transparent thin film transistors
出版物
JOURNAL OF ELECTRONIC MATERIALS
Volume 43, Issue 3, Pages 780-785
出版商
Springer Nature
发表日期
2014-01-02
DOI
10.1007/s11664-013-2957-5

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