Incorporation and Activation of Arsenic Dopant in Single-Crystal CdTe Grown on Si by Molecular Beam Epitaxy

Published 2014 View Full Article

Authors

Keywords

CdTe, As-doping, incorporation, SIMS, activation, Hall measurement, dislocations

Journal

JOURNAL OF ELECTRONIC MATERIALS

Volume 43, Issue 8, Pages 2998-3003

Publisher

Springer Nature

Online

2014-05-08

DOI

10.1007/s11664-014-3173-7

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