Incorporation and Activation of Arsenic Dopant in Single-Crystal CdTe Grown on Si by Molecular Beam Epitaxy

出版年份 2014 全文链接

标题

作者

关键词

CdTe, As-doping, incorporation, SIMS, activation, Hall measurement, dislocations

出版物

Volume 43, Issue 8, Pages 2998-3003

出版商

Springer Nature

发表日期

2014-05-08

DOI

10.1007/s11664-014-3173-7

参考文献

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