期刊
JOURNAL OF ELECTRONIC MATERIALS
卷 39, 期 5, 页码 499-503出版社
SPRINGER
DOI: 10.1007/s11664-010-1139-y
关键词
Gallium nitride; Ohmic contact; breakdown voltage; selective-area growth; plasma-assisted molecular-beam epitaxy
资金
- Research Board and Grainger Center for Electric Machinery and Electromechanics of the University of Illinois and Northrop-Grumman Space Technologies
Selective-area growth (SAG) based on plasma-assisted molecular-beam epitaxy (PAMBE) was shown to facilitate improvement of Ohmic contacts and direct-current (DC) characteristics for GaN-based field-effect transistors (FETs) over the widely accepted ion-implantation technique. Twofold improvements in breakdown voltage were also demonstrated for samples grown on both sapphire and silicon substrates. An AlGaN/GaN high-electron-mobility transistor (HEMT) fabricated with PAMBE-SAG exhibited a low specific contact resistivity of 5.86 x 10(-7) Omega cm(2), peak drain current of 420 mA/mm, and high breakdown voltage of 77 V. These results demonstrate that PAMBE-SAG is suited to fabricating HEMTs for high-power applications.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据