Mg-Vacancy-Induced Semiconducting Properties in Mg2Si1–x Sb x from Electronic Structure Calculations

标题
Mg-Vacancy-Induced Semiconducting Properties in Mg2Si1–x Sb x from Electronic Structure Calculations
作者
关键词
-
出版物
JOURNAL OF ELECTRONIC MATERIALS
Volume 39, Issue 9, Pages 2064-2069
出版商
Springer Nature
发表日期
2009-12-04
DOI
10.1007/s11664-009-1000-3

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