Positive-Bias Stress Test on Amorphous In–Ga–Zn–O Thin Film Transistor: Annealing-Temperature Dependence

出版年份 2014 全文链接

标题

作者

关键词

出版物

Volume 10, Issue 11, Pages 975-978

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2014-08-28

DOI

10.1109/jdt.2014.2350518

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