Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications

Published 2011 View Full Article

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Title
Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications
Authors
Keywords
-
Journal
JOURNAL OF CRYSTAL GROWTH
Volume 352, Issue 1, Pages 39-42
Publisher
Elsevier BV
Online
2011-11-09
DOI
10.1016/j.jcrysgro.2011.10.050

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