Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications

标题
Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications
作者
关键词
-
出版物
JOURNAL OF CRYSTAL GROWTH
Volume 352, Issue 1, Pages 39-42
出版商
Elsevier BV
发表日期
2011-11-09
DOI
10.1016/j.jcrysgro.2011.10.050

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