Journal
JOURNAL OF CRYSTAL GROWTH
Volume 311, Issue 10, Pages 2844-2846Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2009.01.026
Keywords
RHEED; XPS; Molecular beam epitaxy; Nitrides
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AlN layers were formed on (1 1 1)Al substrates at a temperature below the melting point of Al using preheated ammonia in vacuum. The effect of the removal of the surface oxides on the substrate in the process was investigated. It was found that treatment using a buffered HF solution and subsequent annealing in vacuum was effective for obtaining a clean Al substrate surface. It was clarified that the removal of the surface oxides is required for the nitridation of Al substrates at a low temperature below the melting point of Al. (C) 2009 Elsevier B.V. All rights reserved.
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