Monte-Carlo study of electronic transport in non-σh-symmetric two-dimensional materials: Silicene and germanene

Damping of acoustic flexural phonons in silicene: influence on high-field electronic transport

(2018) Raúl Rengel et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Electron-phonon interactions from first principles

(2017) Feliciano Giustino   REVIEWS OF MODERN PHYSICS

Spin-orbit band gaps and destruction of Dirac cones

(2017) I.N. Yakovkin   SURFACE SCIENCE

Current developments in silicene and germanene

(2016) T. P. Kaloni et al.   Physica Status Solidi-Rapid Research Letters

Transport properties of ultrathin black phosphorus on hexagonal boron nitride

(2015) Rostislav A. Doganov et al.   APPLIED PHYSICS LETTERS

Deformation potentials for band-to-band tunneling in silicon and germanium from first principles

(2015) William G. Vandenberghe et al.   APPLIED PHYSICS LETTERS

Silicene field-effect transistors operating at room temperature

(2015) Li Tao et al.   Nature Nanotechnology

Rippling and crumpling in disordered free-standing graphene

(2015) I. V. Gornyi et al.   PHYSICAL REVIEW B

First principles phonon calculations in materials science

(2015) Atsushi Togo et al.   SCRIPTA MATERIALIA

Surface transfer doping induced effective modulation on ambipolar characteristics of few-layer black phosphorus

(2015) Du Xiang et al.   Nature Communications

Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

(2014) Han Liu et al.   ACS Nano

Intrinsic carrier mobility of germanene is larger than graphene's: first-principle calculations

(2014) Xue-Sheng Ye et al.   RSC Advances

First-principles calculation of intrinsic carrier mobility of silicene

(2013) Zhi-Gang Shao et al.   JOURNAL OF APPLIED PHYSICS

Pseudopotential-based studies of electron transport in graphene and graphene nanoribbons

(2013) Massimo V Fischetti et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Intrinsic electrical transport properties of monolayer silicene and MoS2from first principles

(2013) Xiaodong Li et al.   PHYSICAL REVIEW B

Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers

(2012) Stefano Larentis et al.   APPLIED PHYSICS LETTERS

Conductivity of suspended graphene at the Dirac point

(2012) I. V. Gornyi et al.   PHYSICAL REVIEW B

Electronic properties of hydrogenated silicene and germanene

(2011) M. Houssa et al.   APPLIED PHYSICS LETTERS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Low-energy effective Hamiltonian involving spin-orbit coupling in silicene and two-dimensional germanium and tin

(2011) Cheng-Cheng Liu et al.   PHYSICAL REVIEW B

Quantum Spin Hall Effect in Silicene and Two-Dimensional Germanium

(2011) Cheng-Cheng Liu et al.   PHYSICAL REVIEW LETTERS

Temperature-dependent resistivity of suspended graphene

(2010) Eros Mariani et al.   PHYSICAL REVIEW B

Limits on Charge Carrier Mobility in Suspended Graphene due to Flexural Phonons

(2010) Eduardo V. Castro et al.   PHYSICAL REVIEW LETTERS

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Flexural Phonons in Free-Standing Graphene

(2008) Eros Mariani et al.   PHYSICAL REVIEW LETTERS

Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer

(2008) S. V. Morozov et al.   PHYSICAL REVIEW LETTERS

Ultrahigh electron mobility in suspended graphene

(2008) K.I. Bolotin et al.   SOLID STATE COMMUNICATIONS