Spin and valley transport in monolayers of MoS2

A generic tight-binding model for monolayer, bilayer and bulk MoS2

(2013) Ferdows Zahid et al.   AIP Advances

Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides

(2012) Di Xiao et al.   PHYSICAL REVIEW LETTERS

Functionalization of Single-Layer MoS2 Honeycomb Structures

(2011) C. Ataca et al.   Journal of Physical Chemistry C

Mechanical and Electronic Properties of MoS2 Nanoribbons and Their Defects

(2011) C. Ataca et al.   Journal of Physical Chemistry C

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors

(2011) Z. Y. Zhu et al.   PHYSICAL REVIEW B

Valley-Dependent Brewster Angles and Goos-Hänchen Effect in Strained Graphene

(2011) Zhenhua Wu et al.   PHYSICAL REVIEW LETTERS

Magnetic properties of nonmetal atoms absorbed MoS2 monolayers

(2010) Jiangang He et al.   APPLIED PHYSICS LETTERS

Emerging Photoluminescence in Monolayer MoS2

(2010) Andrea Splendiani et al.   NANO LETTERS

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Frictional Characteristics of Atomically Thin Sheets

(2010) C. Lee et al.   SCIENCE

Electronic structure of two-dimensional crystals fromab initiotheory

(2009) S. Lebègue et al.   PHYSICAL REVIEW B

Quantum Goos-Hänchen Effect in Graphene

(2009) C. W. J. Beenakker et al.   PHYSICAL REVIEW LETTERS

The electronic properties of graphene

(2009) A. H. Castro Neto et al.   REVIEWS OF MODERN PHYSICS

MoS2Nanoribbons: High Stability and Unusual Electronic and Magnetic Properties

(2008) Yafei Li et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Tuning of energy levels and optical properties of graphene quantum dots

(2008) Z. Z. Zhang et al.   PHYSICAL REVIEW B

Valley-dependent optoelectronics from inversion symmetry breaking

(2008) Wang Yao et al.   PHYSICAL REVIEW B