Impact of rapid thermal processing on oxygen precipitation in heavily arsenic and antimony doped Czochralski silicon

Effect of tin on point defects and oxygen precipitation in Czochralski silicon: Experimental and theoretical studies

(2013) Chao Gao et al.   JOURNAL OF APPLIED PHYSICS

Silicon Single Crystal Growth from a Melt: On the Impact of Dopants on thev/GCriterion

(2013) Jan Vanhellemont et al.   ECS Journal of Solid State Science and Technology

Interaction of n-type dopants with oxygen in silicon and germanium

(2012) A. Chroneos et al.   JOURNAL OF APPLIED PHYSICS

Modeling the Early Stages of Oxygen Agglomeration

(2011) G. Kissinger et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

On the impact of germanium doping on the vacancy formation energy in Czochralski-grown silicon

(2010) Jan Vanhellemont et al.   JOURNAL OF APPLIED PHYSICS

Effects of high temperature rapid thermal processing on oxygen precipitation in heavily arsenic-doped Czochralski silicon

(2010) Biao Wang et al.   JOURNAL OF CRYSTAL GROWTH

Radiation-induced defects in Czochralski-grown silicon containing carbon and germanium

(2009) C A Londos et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY