Effect of tin on point defects and oxygen precipitation in Czochralski silicon: Experimental and theoretical studies

Point defect engineering strategies to suppress A-center formation in silicon

(2011) A. Chroneos et al.   APPLIED PHYSICS LETTERS

IR studies of the impact of Ge doping on the successive conversion of VOn defects in Czochralski-Si containing carbon

(2011) C. A. Londos et al.   JOURNAL OF APPLIED PHYSICS

Effect of tin doping on oxygen- and carbon-related defects in Czochralski silicon

(2011) A. Chroneos et al.   JOURNAL OF APPLIED PHYSICS

On the impact of germanium doping on the vacancy formation energy in Czochralski-grown silicon

(2010) Jan Vanhellemont et al.   JOURNAL OF APPLIED PHYSICS

Interaction of A-centers with isovalent impurities in silicon

(2010) A. Chroneos et al.   JOURNAL OF APPLIED PHYSICS

Impurity engineering of Czochralski silicon used for ultra large-scaled-integrated circuits

(2008) Deren Yang et al.   JOURNAL OF CRYSTAL GROWTH

The effect of germanium doping on the evolution of defects in silicon

(2008) C.A. Londos et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials