Journal
NANOTECHNOLOGY
Volume 20, Issue 7, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/20/7/075604
Keywords
-
Funding
- German Research Foundation
Ask authors/readers for more resources
Self-organized and highly ordered GaN nanorods were grown without catalyst on r-plane sapphire using a combination of molecular beam epitaxy and metal-organic vapor-phase epitaxy. AlN nucleation centers for the nanorods were prepared by nitridation of the sapphire in a metal-organic vapor-phase epitaxy reactor, while the nanorods were grown by molecular beam epitaxy. A coalesced two-dimensional GaN layer was observed between the nanorods. The nanorods are inclined by 62 degrees towards the +/-[1 (1) over bar 00]-directions of the a-plane GaN layer. The high degree of ordering and the structural perfection were confirmed by micro-photoluminescence measurements.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available