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Title
Impact of isovalent doping on radiation defects in silicon
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 114, Issue 11, Pages 113504
Publisher
AIP Publishing
Online
2013-09-19
DOI
10.1063/1.4821116
References
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Related references
Note: Only part of the references are listed.- A-centers in silicon studied with hybrid density functional theory
- (2013) H. Wang et al. APPLIED PHYSICS LETTERS
- Production and evolution of A-centers in n-type Si1−xGex
- (2013) E. N. Sgourou et al. JOURNAL OF APPLIED PHYSICS
- Erratum “Impact of isovalent doping on the trapping of vacancy and interstitial related defects in Si” [J. Appl. Phys. 113, 113506 (2013)]
- (2013) E. N. Sgourou et al. JOURNAL OF APPLIED PHYSICS
- Formation and evolution of oxygen-vacancy clusters in lead and tin doped silicon
- (2012) C. A. Londos et al. JOURNAL OF APPLIED PHYSICS
- Defect engineering of the oxygen-vacancy clusters formation in electron irradiated silicon by isovalent doping: An infrared perspective
- (2012) C. A. Londos et al. JOURNAL OF APPLIED PHYSICS
- Impact of isovalent defect engineering strategies on carbon-related clusters in silicon
- (2012) C. A. Londos et al. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
- Point defect diffusion in Si and SiGe revisited through atomistic simulations
- (2012) Pascal Pochet et al. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Point defect engineering strategies to suppress A-center formation in silicon
- (2011) A. Chroneos et al. APPLIED PHYSICS LETTERS
- Effect of tin doping on oxygen- and carbon-related defects in Czochralski silicon
- (2011) A. Chroneos et al. JOURNAL OF APPLIED PHYSICS
- Optimized energy landscape exploration using the ab initio based activation-relaxation technique
- (2011) Eduardo Machado-Charry et al. JOURNAL OF CHEMICAL PHYSICS
- Effect of germanium doping on the annealing characteristics of oxygen and carbon-related defects in Czochralski silicon
- (2010) C. A. Londos et al. JOURNAL OF APPLIED PHYSICS
- Dopant-vacancy cluster formation in germanium
- (2010) A. Chroneos JOURNAL OF APPLIED PHYSICS
- Radiation effects on the behavior of carbon and oxygen impurities and the role of Ge in Czochralski grown Si upon annealing
- (2009) C. A. Londos et al. JOURNAL OF APPLIED PHYSICS
- Density functional theory calculation on many-cores hybrid central processing unit-graphic processing unit architectures
- (2009) Luigi Genovese et al. JOURNAL OF CHEMICAL PHYSICS
- Effects of germanium doping on the behavior of oxygen and carbon impurities and impurity-related complexes in Si
- (2009) C.A. Londos et al. PHYSICA B-CONDENSED MATTER
- Radiation-induced defects in Czochralski-grown silicon containing carbon and germanium
- (2009) C A Londos et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Daubechies wavelets as a basis set for density functional pseudopotential calculations
- (2008) Luigi Genovese et al. JOURNAL OF CHEMICAL PHYSICS
- The effect of germanium doping on the evolution of defects in silicon
- (2008) C.A. Londos et al. Materials Science and Engineering B-Advanced Functional Solid-State Materials
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