$\hbox{TiN/ZrO}_{2}$/Ti/Al Metal–Insulator–Metal Capacitors With Subnanometer CET Using ALD-Deposited $\hbox{ZrO}_{2}$ for DRAM Applications

Published 2009 View Full Article

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Title
$\hbox{TiN/ZrO}_{2}$/Ti/Al Metal–Insulator–Metal Capacitors With Subnanometer CET Using ALD-Deposited $\hbox{ZrO}_{2}$ for DRAM Applications
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 30, Issue 3, Pages 219-221
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2009-02-14
DOI
10.1109/led.2008.2012356

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