Effect of isochronal hydrogen annealing on surface roughness and threading dislocation density of epitaxial Ge films grown on Si

Published 2009 View Full Article

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Title
Effect of isochronal hydrogen annealing on surface roughness and threading dislocation density of epitaxial Ge films grown on Si
Authors
Keywords
-
Journal
THIN SOLID FILMS
Volume 518, Issue 6, Pages S136-S139
Publisher
Elsevier BV
Online
2009-10-22
DOI
10.1016/j.tsf.2009.10.072

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