Effect of spacer layer thickness on multi-stacked InGaAs quantum dots grown on GaAs (311)B substrate for application to intermediate band solar cells

Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell

(2011) Yoshitaka Okada et al.   JOURNAL OF APPLIED PHYSICS

Strong Enhancement of Solar Cell Efficiency Due to Quantum Dots with Built-In Charge

(2011) Kimberly A. Sablon et al.   NANO LETTERS

Self-consistent simulation of intermediate band solar cells: Effect of occupation rates on device characteristics

(2010) Katsuhisa Yoshida et al.   APPLIED PHYSICS LETTERS

Formation of InAs quantum dots at ultrahigh growth rates

(2010) Kouichi Akahane et al.   PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

Structural properties of multi-stacked self-organized InGaAs quantum dots grown on GaAs (311)B substrate

(2009) Yasushi Shoji et al.   JOURNAL OF CRYSTAL GROWTH

The effect of spacer layer thickness on vertical alignment of InGaAs/GaNAs quantum dots grown on GaAs(311)B substrate

(2009) Yasushi Shoji et al.   PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

Photoluminescence characteristics of quantum dots with electronic states interconnected along growth direction

(2008) Osamu Kojima et al.   JOURNAL OF APPLIED PHYSICS