Transient photoresponse and incident power dependence of high-efficiency germanium quantum dot photodetectors

High-efficiency silicon-compatible photodetectors based on Ge quantum dots

(2011) S. Cosentino et al.   APPLIED PHYSICS LETTERS

High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching

(2011) M. Martens et al.   APPLIED PHYSICS LETTERS

The role of the surfaces in the photon absorption in Ge nanoclusters embedded in silica

(2011) Mirabella Salvatore et al.   Nanoscale Research Letters

Size controlled synthesis of Ge nanocrystals in SiO2 at temperatures below 400 °C using magnetron sputtering

(2010) B. Zhang et al.   APPLIED PHYSICS LETTERS

Near-infrared photodetection based on PbS colloidal quantum dots/organic hole conductor

(2010) Sang Hyuk Im et al.   ORGANIC ELECTRONICS

Near-infrared silicon quantum dots metal-oxide-semiconductor field-effect transistor photodetector

(2009) Jia-Min Shieh et al.   APPLIED PHYSICS LETTERS

Plasma synthesis of group IV quantum dots for luminescence and photovoltaic applications

(2008) Uwe Kortshagen et al.   PURE AND APPLIED CHEMISTRY

MBE growth of ultra small coherent Ge quantum dots in silicon for applications in nanoelectronics

(2007) O.P. Pchelyakov et al.   JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS