期刊
JOURNAL OF APPLIED PHYSICS
卷 112, 期 8, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4759252
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资金
- National Science Foundation [ECCS-1068895, DMR-1203186, DMR-0804915]
- Blanceflor Boncompagni-Ludovisi Foundation
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0804915] Funding Source: National Science Foundation
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1203186] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1068895] Funding Source: National Science Foundation
We report a systematic study of time-resolved and power-dependent photoresponse in high-efficiency germanium quantum dot photodetectors (Ge-QD PDs), with internal quantum efficiencies greater than 100% over a broad wavelength, reverse bias, and incident power range. Turn-on and turn-off response times (tau(on) and tau(off)) are shown to depend on series resistance, bias, optical power, and thickness (W-QD) of the Ge-QD layer, with measured tau(off) values down to similar to 40 ns. Two different photoconduction regimes are observed at low and high reverse bias, with a transition around -3 V. A transient current overshoot phenomenon is also observed, which depends on bias and illumination power. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4759252]
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