Quantum confinement in Si and Ge nanostructures

The energy band alignment of Si nanocrystals in SiO2

(2011) G. Seguini et al.   APPLIED PHYSICS LETTERS

Bandgap shift by quantum confinement effect in 〈100〉 Si-nanowires derived from threshold-voltage shift of fabricated metal-oxide-semiconductor field effect transistors and theoretical calculations

(2011) Hironori Yoshioka et al.   JOURNAL OF APPLIED PHYSICS

Symmetry reduction in multiband Hamiltonians for semiconductor quantum dots: The role of interfaces and higher energy bands

(2011) Stanko Tomić et al.   JOURNAL OF APPLIED PHYSICS

Ion beam studies of Ge diffusion in

(2011) E.G. Barbagiovanni et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Electronic structure study of ion-implanted Si quantum dots in a SiO2matrix: Analysis of quantum confinement theories

(2011) E. G. Barbagiovanni et al.   PHYSICAL REVIEW B

Effects of the passivating coating on the properties of silicon nanocrystals

(2010) Nacir Tit et al.   MATERIALS CHEMISTRY AND PHYSICS

Effective density of states and carrier masses for Si/SiO2superlattices from first principles

(2010) K Seino et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Size-dependent interface band alignment between Si nanocrystals and lattice-matched Gd2O3

(2009) V. V. Afanas’ev et al.   APPLIED PHYSICS LETTERS

Spurious Solutions in the Multiband Effective Mass Theory Applied to Low Dimensional Nanostructures

(2009) B. Lassen et al.   Communications in Computational Physics

Role of vacancy-type defects in the formation of silicon nanocrystals

(2009) C. R. Mokry et al.   JOURNAL OF APPLIED PHYSICS

Photoluminescence Efficiency of Self-Assembled Ge Nanocrystals

(2009) N. L. Rowell et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Fabrication of precisely controlled silicon wire and cone arrays by electrochemical etching

(2009) Hong-Seok Seo et al.   MATERIALS LETTERS