Electronic structure study of ion-implanted Si quantum dots in a SiO2matrix: Analysis of quantum confinement theories

Title
Electronic structure study of ion-implanted Si quantum dots in a SiO2matrix: Analysis of quantum confinement theories
Authors
Keywords
-
Journal
PHYSICAL REVIEW B
Volume 83, Issue 3, Pages -
Publisher
American Physical Society (APS)
Online
2011-01-14
DOI
10.1103/physrevb.83.035112

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