Identification of defect types in moderately Si-doped GaInNAsSb layer in p-GaAs/n- GaInNAsSb/n-GaAs solar cell structure using admittance spectroscopy

出版年份 2012 全文链接

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出版物

JOURNAL OF APPLIED PHYSICS

Volume 112, Issue 11, Pages 114910

出版商

AIP Publishing

发表日期

2012-12-12

DOI

10.1063/1.4768716

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