Article
Materials Science, Ceramics
Koji Abe, Tasuku Kubota
Summary: Al-doped ZnO (AZO) films were prepared by sol-gel method using precursor solutions containing oxygen sources. Zinc vacancy acceptors were formed under oxygen-rich growth conditions. Glass substrates with a zinc layer were used to supply zinc to the AZO films during calcination annealing. The AZO films showed wurtzite ZnO crystal structure and high transparency. The electrical properties of the films were improved by using substrates with a zinc layer, achieving a low resistivity of 9.4 x 10(-4) Ocm.
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY
(2023)
Article
Chemistry, Physical
WooJun Seol, Gopinathan Anoop, Hyeonghun Park, Cheol Woong Shin, Jun Young Lee, Tae Yeon Kim, Wan Sik Kim, Hyunjin Joh, Shibnath Samanta, Ji Young Jo
Summary: In this study, V-doped ZnO thin films with high polarization values were successfully prepared by controlling crystallite size, morphology, and valence state of vanadium, opening up the possibility of utilizing ferroelectric VeZnO in particulate matter filtering devices. The study demonstrated the importance of crystalline properties and valence state of V in determining the ferroelectric and dielectric properties of VeZnO films, with potential applications in air filter coatings for efficient particulate matter filtration.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Optics
Manohar Singh, Anit K. Ambedkar, Shrestha Tyagi, Virendra Kumar, Prashant Yadav, Ashwani Kumar, Yogendra K. Gautam, Beer Pal Singh
Summary: In this study, pure ZnO and Cu-doped ZnO thin films were deposited on a glass substrate using reactive co-sputtering. The structural, morphological, and optical properties of the thin films were characterized. The results showed that Cu doping modified the crystal structure, surface morphology, and optical properties of ZnO thin films. These findings are important for the research and applications of Cu-doped ZnO thin films.
Article
Chemistry, Analytical
M. Toma, R. Domokos, C. Lung, D. Marconi, M. Pop
Summary: This article describes the influence of deposition parameters on the structural, morphological, optical, and electrical properties of ZnO thin films doped with Ga and co-doped with (Ga + Nd). The thin films were fabricated using RF magnetron sputtering with a power of 100 W and a deposition distance of 6 cm. XRD analysis was used to analyze the influence of doping on the film structure. Optical transmission measurements showed a decrease in transparency when dopants were added, and AFM analysis revealed that the type of doping affected the microstructure of the films. Raman and resistivity measurements confirmed successful incorporation of dopants into the ZnO host material.
ANALYTICAL LETTERS
(2023)
Article
Materials Science, Multidisciplinary
Laya Dejam, Slawomir Kulesza, Jamshid Sabbaghzadeh, Atefeh Ghaderi, Shahram Solaymani, Stefan Talu, Miroslaw Bramowicz, Mitra Amouamouha, Amir Hossein Salehi Shayegan, Amir Hossein Sari
Summary: In this study, thin films of undoped ZnO, ZnO doped with Al, ZnO doped with Cu, and co-doped ZnO with Al and Cu were deposited on quartz substrates using RF sputtering. The samples were investigated for their advanced fractal features, crystalline structure, and optical properties. The results showed that the films had different morphologies and transmission spectra, with the co-doped sample exhibiting the highest transparency in the visible region and a desirable band gap.
RESULTS IN PHYSICS
(2023)
Article
Materials Science, Multidisciplinary
Bibhu P. Swain
Summary: Undoped zinc oxide and carbon-doped zinc oxide thin films were synthesized at various process temperatures using chemical vapor deposition. AFM results showed changes in particle size and lattice strain with temperature, along with variations in oxygen and zinc contents, optical bandgap, and photoluminescence properties. The possible bonding network of core orbital elements in the C:ZnO thin films was discussed using deconvolution analysis.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
(2021)
Article
Engineering, Electrical & Electronic
Mahmoud K. Abdel-Latif, Mohamed Mobarak, Neerish Revaprasadu, Abdel Hameed Ashraf, Waled Othman, Moatasem Mostafa Khalefa, Ahmed A. Aboud, Motaz Ismail
Summary: This study investigates the optical and electrical properties of pure and lanthanum-doped zinc oxide thin films prepared using the spray pyrolysis technique. X-ray diffraction shows that crystalline ZnO thin films with (002) preferred orientation are formed after La-doping. Raman spectra confirm the deposition of single ZnO phase without impurity phases. The optical bandgap increases upon doping, reaching a maximum at 3 wt% La-content.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2023)
Article
Nanoscience & Nanotechnology
Fabio Isa, James P. Best, Anna Marzegalli, Marco Albani, Christophe Comte, Jamie J. Kruzic, Avi Bendavid
Summary: A novel approach is presented in this paper to tailor the stress properties of diamond thin films through boron doping and micro-fabrication of bridges using focused ion beam milling. Experimental data, supported by detailed confocal micro-Raman investigations and finite element method calculations, suggest that appropriate design of microbridge geometries, together with boron doping, can significantly enhance or diminish material stress compared to non-patterned thin films. This approach, combined with deterministic incorporation and positioning of diamond color centers, may offer new opportunities to tailor the optical and spin properties of diamond-based quantum devices through stress engineering.
Article
Engineering, Electrical & Electronic
Sujun Guan, Lijun Wang, Yuri Tamamoto, Mikihiro Kato, Yun Lu, Xinwei Zhao
Summary: In this study, a simple and effective method for fabricating transparent p-type zinc oxide (ZnO) thin films was developed via molten-salt treatment (MST) in KNO3 for n-type ZnO thin films. The influence of filming temperature during sputtering and the followed MST on various properties of ZnO thin films was investigated, showing improved crystalline quality and surface morphology with higher filming temperature. After MST treatment, the ZnO thin films exhibited p-type characteristics with excellent transmittance and increased mobility.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2021)
Article
Multidisciplinary Sciences
Tomasz Tanski, Marta Zaborowska, Pawel Jarka, Anna Wozniak
Summary: Hydrophilic and photocatalytically active ZnO and ZnO thin films doped with rare earth metal oxides (Yb2O3 and Eu2O3) were successfully prepared using a combination of sol-gel technique, spin-coating, and thermal treatment. The films exhibited high optical transmittance and were tested for their morphology, chemical composition, roughness, and optical properties. The degradation efficiency of rhodamine B in aqueous solution was also analyzed, showing promising results for water purification. The presented methodology can be applied to coatings for photovoltaic panels and architectural glass structures.
SCIENTIFIC REPORTS
(2022)
Article
Engineering, Environmental
Athorn Vora-ud, Anh Tuan Thanh Pham, Dai Cao Truong, Somporn Thoawankeaw, Hoa Thi Lai, Thu Bao Nguyen Le, Nhat Minh Quang Tran, Mekhala Insawang, Pennapa Muthitamongkol, Mati Horprathum, Manish Kumar, Sungkyun Park, Gerald Jeffrey Snyder, Tosawat Seetawan, Thang Bach Phan
Summary: In this study, the thermoelectric properties of Ga and In doped ZnO films (IGZO) deposited on a polyimide substrate were reported, along with the fabrication of 4-unileg flexible IGZO thermoelectric devices. The best power factor was achieved in the IGZO film annealed at 250 degrees C. The practical application of flexible IGZO films was demonstrated through a 4-unileg-IGZO films thermoelectric module.
CHEMICAL ENGINEERING JOURNAL
(2023)
Article
Chemistry, Physical
Yaoyao Liu, Shuming Jiang, Xu Zhou, Chengtao Xia, Qiang Wu, Xiangyang Ma, Lu Chen, Jianghong Yao, Jingjun Xu
Summary: This study achieved high-concentration F-doped ZnO thin films with high transparency and Hall mobility for the first time via femtosecond-laser hyperdoping. The highest atomic percentage of F reached 8.3 at.%, which was over three times larger than previous reports. The F-doped ZnO showed a significant increase in carrier concentration and decrease in resistivity compared to pristine ZnO. This technology can reduce power dissipation and improve current carrying capacity of ZnO-based devices.
SURFACES AND INTERFACES
(2023)
Article
Physics, Condensed Matter
Seyda Horzum, Emel Bulduk, Deniz Sener, Tulay Serin
Summary: The study investigated the effects of doping with Indium, Gallium, and Aluminum on the structural, optical, and vibrational properties of ZnO thin films prepared by the sol-gel dip-coating method. Results showed changes in crystallite size and phonon modes upon doping, with dopant atoms effectively tuning the film's optical properties.
SUPERLATTICES AND MICROSTRUCTURES
(2021)
Article
Chemistry, Multidisciplinary
Victor V. Petrov, Irina O. Ignatieva, Maria G. Volkova, Irina A. Gulyaeva, Ilya V. Pankov, Ekaterina M. Bayan
Summary: Transparent Al-doped ZnO films were synthesized by solid-phase pyrolysis and characterized by XRD, SEM, and TEM. The films exhibit wurtzite structure and have a uniform distribution of nanoparticles. The introduction of 1% Al results in a narrowed band gap and improved response time to radiation.
Article
Engineering, Electrical & Electronic
Suat Pat, Reza Mohammadigharehbagh, Nihan Akkurt, Sadan Korkmaz
Summary: In this research, Ta doped ZnO thin films were successfully deposited using the TVA system. Various analysis methods were used to study the properties of the films, revealing changes in band gap after doping and the presence of β'-Ta2O5 in the structure. Factors such as doping levels and substrate materials have a significant impact on the film properties.
OPTICAL AND QUANTUM ELECTRONICS
(2021)