4.6 Article

Enhancement of the ultraviolet absorption and Raman efficiencies of a few nanometer thick Si-on-insulator

Journal

JOURNAL OF APPLIED PHYSICS
Volume 112, Issue 7, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4757598

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Funding

  1. Government of Russian Federation [11.G34.31.0035]

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We show that a 3-7 nm thick Si-on-insulator (SOI) film displays UV absorption and Raman enhancement compared to bulk Si at a proper thickness of the buried oxide layer between the film and Si substrate. Experiment shows similar to fivefold SOI Raman enhancement for 3-4 nm thick films while theory predicts enhancement up to a factor of similar to 20 for 2 nm thick SOI. This discrepancy is attributed to non-uniformity of SOI thickness. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4757598]

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