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Title
Growth of large domain epitaxial graphene on the C-face of SiC
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 112, Issue 10, Pages 104307
Publisher
AIP Publishing
Online
2012-11-22
DOI
10.1063/1.4765666
References
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Related references
Note: Only part of the references are listed.- Structured epitaxial graphene: growth and properties
- (2012) Yike Hu et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
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- (2011) Weijie Zhao et al. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
- Epitaxial Graphene Nucleation on C-Face Silicon Carbide
- (2011) Jennifer K. Hite et al. NANO LETTERS
- Model for the epitaxial growth of graphene on 6H-SiC(0001)
- (2011) Fan Ming et al. PHYSICAL REVIEW B
- Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide
- (2011) W. A. de Heer et al. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
- Wafer-Scale Graphene Integrated Circuit
- (2011) Y.-M. Lin et al. SCIENCE
- Graphene Films with Large Domain Size by a Two-Step Chemical Vapor Deposition Process
- (2010) Xuesong Li et al. NANO LETTERS
- Comparison of graphene formation on C-face and Si-face SiC {0001} surfaces
- (2010) Luxmi et al. PHYSICAL REVIEW B
- Role of carbon surface diffusion on the growth of epitaxial graphene on SiC
- (2010) Taisuke Ohta et al. PHYSICAL REVIEW B
- Nucleation of Epitaxial Graphene on SiC(0001)
- (2009) Joshua Robinson et al. ACS Nano
- Half integer quantum Hall effect in high mobility single layer epitaxial graphene
- (2009) Xiaosong Wu et al. APPLIED PHYSICS LETTERS
- Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
- (2009) Konstantin V. Emtsev et al. NATURE MATERIALS
- Formation process of graphene on SiC (0001)
- (2009) W. Norimatsu et al. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
- Graphene formation mechanisms on4H-SiC(0001)
- (2009) Michael L. Bolen et al. PHYSICAL REVIEW B
- Anisotropic growth of long isolated graphene ribbons on the C face of graphite-capped6H-SiC
- (2009) Nicolas Camara et al. PHYSICAL REVIEW B
- Step-edge instability during epitaxial growth of graphene from SiC(0001)
- (2009) Valery Borovikov et al. PHYSICAL REVIEW B
- Thermodynamics and Kinetics of Graphene Growth on SiC(0001)
- (2009) R. M. Tromp et al. PHYSICAL REVIEW LETTERS
- Bottom-up Growth of Epitaxial Graphene on 6H-SiC(0001)
- (2008) Han Huang et al. ACS Nano
- Probing epitaxial growth of graphene on silicon carbide by metal decoration
- (2008) Siew Wai Poon et al. APPLIED PHYSICS LETTERS
- Raman spectra of epitaxial graphene on SiC(0001)
- (2008) J. Röhrl et al. APPLIED PHYSICS LETTERS
- Anomalies in thickness measurements of graphene and few layer graphite crystals by tapping mode atomic force microscopy
- (2008) P. Nemes-Incze et al. CARBON
- Homogeneous large-area graphene layer growth on6H-SiC(0001)
- (2008) C. Virojanadara et al. PHYSICAL REVIEW B
- Raman spectroscopy of epitaxial graphene on a SiC substrate
- (2008) Z. H. Ni et al. PHYSICAL REVIEW B
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