Characterization of defect evolution in ultrathin SiO2 layers under applied electrical stress

In situ transmission electron microscopy study of dielectric breakdown of surface oxides during electric field-assisted sintering of nickel nanoparticles

(2012) Cecile S. Bonifacio et al.   APPLIED PHYSICS LETTERS

Grain boundary assisted degradation and breakdown study in cerium oxide gate dielectric using scanning tunneling microscopy

(2011) K. Shubhakar et al.   APPLIED PHYSICS LETTERS

SiON and SiO2/HfSiON gate oxides time dependent dielectric breakdown measurements at nanoscale in ultra high vacuum

(2011) P. Delcroix et al.   MICROELECTRONIC ENGINEERING

Evidence for compliance controlled oxygen vacancy and metal filament based resistive switching mechanisms in RRAM

(2011) Nagarajan Raghavan et al.   MICROELECTRONIC ENGINEERING

Unipolar recovery of dielectric breakdown in fully silicided high-κ gate stack devices and its reliability implications

(2010) N. Raghavan et al.   APPLIED PHYSICS LETTERS

Field assisted sintering of nickel nanoparticles during in situ transmission electron microscopy

(2010) Troy B. Holland et al.   APPLIED PHYSICS LETTERS

Modified Percolation Model for Polycrystalline High-$ \kappa$ Gate Stack With Grain Boundary Defects

(2010) Nagarajan Raghavan et al.   IEEE ELECTRON DEVICE LETTERS

The nature of dielectric breakdown

(2008) X. Li et al.   APPLIED PHYSICS LETTERS

Theory of Breakdown Position Determination by Voltage- and Current-Ratio Methods

(2008) Muhammad Ashraful Alam et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Experiments and modeling of spark plasma sintered, functionally graded boron carbide–aluminum composites

(2007) Dustin M. Hulbert et al.   MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING