Green luminescence of InGaN nanowires grown on silicon substrates by molecular beam epitaxy

Experimental Determination of Single CdSe Nanowire Absorption Cross Sections through Photothermal Imaging

(2010) Jay Giblin et al.   ACS Nano

High efficiency green, yellow, and amber emission from InGaN/GaN dot-in-a-wire heterostructures on Si(111)

(2010) Y.-L. Chang et al.   APPLIED PHYSICS LETTERS

Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate

(2010) Hiroto Sekiguchi et al.   APPLIED PHYSICS LETTERS

Multicolour luminescence from InGaN quantum wells grown over GaN nanowire arrays by molecular-beam epitaxy

(2010) R Armitage et al.   NANOTECHNOLOGY

Wavelength Sensitivity of Single Nanowire Excitation Polarization Anisotropies Explained through a Generalized Treatment of Their Linear Absorption

(2009) Jay Giblin et al.   ACS Nano

InGaN nanorod arrays grown by molecular beam epitaxy: Growth mechanism structural and optical properties

(2009) K.M. Wu et al.   APPLIED SURFACE SCIENCE

Growth of III–V semiconductor nanowires by molecular beam epitaxy

(2008) F. Jabeen et al.   MICROELECTRONICS JOURNAL

Point Defect Configurations of Supersaturated Au Atoms Inside Si Nanowires

(2008) Sang Ho Oh et al.   NANO LETTERS