Journal
APPLIED SURFACE SCIENCE
Volume 255, Issue 13-14, Pages 6705-6709Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2009.02.065
Keywords
InGaN; Nanorods; Molecular beam epitaxy
Categories
Funding
- National 973 Program [2007CB935304]
- NSFC [10775110]
- Specialized Research Fund [20060486047]
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Vertically c-axis-aligned InGaN nanorod arrays were synthesized on c-plane sapphire substrates by radio-frequency molecular beam epitaxy. In situ reflection high-energy electron diffraction was used to monitor the growth process. X-ray diffraction, transmission electron microscopy, field-emission scanning electron microscope, and photoluminescence were used to investigate the structural and optical properties of the nanorods. The growth mechanism was studied and a growth model was proposed based on the experimental data. A red shift of photoluminescence spectrum of InGaN nanorods with increasing growth time was found and attributed to the partial release of stress in the InGaN nanorods. (C) 2009 Elsevier B. V. All rights reserved.
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