Effects of band-tails on the subthreshold characteristics of nanowire band-to-band tunneling transistors

Heterojunction Vertical Band-to-Band Tunneling Transistors for Steep Subthreshold Swing and High on Current

(2011) K Ganapathi et al.   IEEE ELECTRON DEVICE LETTERS

Effect of Uniaxial Strain on the Drain Current of a Heterojunction Tunneling Field-Effect Transistor

(2011) Paul M. Solomon et al.   IEEE ELECTRON DEVICE LETTERS

Silicon Nanowire Tunneling Field-Effect Transistor Arrays: Improving Subthreshold Performance Using Excimer Laser Annealing

(2011) Joshua T. Smith et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Analysis of InAs vertical and lateral band-to-band tunneling transistors: Leveraging vertical tunneling for improved performance

(2010) Kartik Ganapathi et al.   APPLIED PHYSICS LETTERS

Urbach tail studies by luminescence filtering in moderately doped bulk InP

(2010) Arsen V. Subashiev et al.   APPLIED PHYSICS LETTERS

Temperature-Dependent $I$– $V$ Characteristics of a Vertical $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Tunnel FET

(2010) Saurabh Mookerjea et al.   IEEE ELECTRON DEVICE LETTERS

Modeling of High-Performance p-Type III–V Heterojunction Tunnel FETs

(2010) J. Knoch et al.   IEEE ELECTRON DEVICE LETTERS

Effect of Pocket Doping and Annealing Schemes on the Source-Pocket Tunnel Field-Effect Transistor

(2010) Ritesh Jhaveri et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Diameter dependent performance of high-speed, low-power InAs nanowire field-effect transistors

(2010) M. Abul Khayer et al.   JOURNAL OF APPLIED PHYSICS

Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling

(2010) Mathieu Luisier et al.   JOURNAL OF APPLIED PHYSICS

Low-Voltage Tunnel Transistors for Beyond CMOS Logic

(2010) Alan C. Seabaugh et al.   PROCEEDINGS OF THE IEEE

Performance analysis of InP nanowire band-to-band tunneling field-effect transistors

(2009) M. Abul Khayer et al.   APPLIED PHYSICS LETTERS

Drive Currents and Leakage Currents in InSb and InAs Nanowire and Carbon Nanotube Band-to-Band Tunneling FETs

(2009) M.A. Khayer et al.   IEEE ELECTRON DEVICE LETTERS

Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors

(2009) Mathieu Luisier et al.   IEEE ELECTRON DEVICE LETTERS

Band-to-Band Tunneling Ballistic Nanowire FET: Circuit-Compatible Device Modeling and Design of Ultra-Low-Power Digital Circuits and Memories

(2009) Niladri Narayan Mojumder et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering

(2009) Mathieu Luisier et al.   PHYSICAL REVIEW B

Influence of phonon scattering on the performance of p-i-n band-to-band tunneling transistors

(2008) Siyuranga O. Koswatta et al.   APPLIED PHYSICS LETTERS

Silicon nanowire tunneling field-effect transistors

(2008) M. T. Björk et al.   APPLIED PHYSICS LETTERS

Performance of $n$-Type InSb and InAs Nanowire Field-Effect Transistors

(2008) M. Abul Khayer et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Toward Nanowire Electronics

(2008) Joerg Appenzeller et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Fully-depleted Ge interband tunnel transistor: Modeling and junction formation

(2008) Qin Zhang et al.   SOLID-STATE ELECTRONICS