Charge trapping in alumina and its impact on the operation of metal-alumina-nitride-oxide-silicon memories: Experiments and simulations

Temperature effects on metal-alumina-nitride-oxide-silicon memory operations

(2010) Andrea Padovani et al.   APPLIED PHYSICS LETTERS

Modeling TANOS Memory Program Transients to Investigate Charge-Trapping Dynamics

(2009) A. Padovani et al.   IEEE ELECTRON DEVICE LETTERS

Nonvolatile-Memory Characteristics of $\hbox{AlO}^{-}$ -Implanted $\hbox{Al}_{2}\hbox{O}_{3}$

(2009) M.C. Kim et al.   IEEE ELECTRON DEVICE LETTERS

Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells

(2009) Elisa Vianello et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Energy and Spatial Distributions of Electron Traps Throughout $\hbox{SiO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}$ Stacks as the IPD in Flash Memory Application

(2009) Xue Feng Zheng et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Study of Hole Traps in the Oxide-Nitride-Oxide Structure of the SONOS Flash Memory

(2009) Yu Jeong Seo et al.   JOURNAL OF THE KOREAN PHYSICAL SOCIETY

Electronic structure of memory traps in silicon nitride

(2009) V.A. Gritsenko et al.   MICROELECTRONIC ENGINEERING

Oxygen vacancy levels and interfaces of Al2O3

(2009) D. Liu et al.   MICROELECTRONIC ENGINEERING

Impact of oxygen incorporation at the Si3N4∕Al2O3 interface on retention characteristics for nonvolatile memory applications

(2008) Man Chang et al.   APPLIED PHYSICS LETTERS

Analysis of electronic memory traps in the oxide-nitride-oxide structure of a polysilicon-oxide-nitride-oxide-semiconductor flash memory

(2008) Y. J. Seo et al.   APPLIED PHYSICS LETTERS

Characterization of scaled MANOS nonvolatile semiconductor memory (NVSM) devices

(2008) Gan Wang et al.   SOLID-STATE ELECTRONICS