A study of the impact of dislocations on the thermoelectric properties of quantum wells in the Si/SiGe materials system

Influence of defects and interface on radiative transition of Ge

(2011) S.-R. Jan et al.   APPLIED PHYSICS LETTERS

Reduced Thermal Conductivity in Nanoengineered Rough Ge and GaAs Nanowires

(2010) Pierre N. Martin et al.   NANO LETTERS

Strain dependence of hole effective mass and scattering mechanism in strained Ge channel structures

(2009) K. Sawano et al.   APPLIED PHYSICS LETTERS

High mobility holes in a strained Ge quantum well grown on a thin and relaxed Si0.4Ge0.6/LT-Si0.4Ge0.6/Si(001) virtual substrate

(2009) M. Myronov et al.   APPLIED PHYSICS LETTERS

The progress towards terahertz quantum cascade lasers on silicon substrates

(2009) D.J. Paul   Laser & Photonics Reviews

Impact of Phonon-Surface Roughness Scattering on Thermal Conductivity of Thin Si Nanowires

(2009) Pierre Martin et al.   PHYSICAL REVIEW LETTERS

Low surface roughness and threading dislocation density Ge growth on Si (001)

(2008) Donghun Choi et al.   JOURNAL OF CRYSTAL GROWTH

8-bandk.pmodeling of the quantum confined Stark effect in Ge quantum wells on Si substrates

(2008) D. J. Paul   PHYSICAL REVIEW B