High mobility holes in a strained Ge quantum well grown on a thin and relaxed Si0.4Ge0.6/LT-Si0.4Ge0.6/Si(001) virtual substrate

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Title
High mobility holes in a strained Ge quantum well grown on a thin and relaxed Si0.4Ge0.6/LT-Si0.4Ge0.6/Si(001) virtual substrate
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 9, Pages 092108
Publisher
AIP Publishing
Online
2009-03-05
DOI
10.1063/1.3090034

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