4.6 Article

Titanium doped silicon layers with very high concentration

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JOURNAL OF APPLIED PHYSICS
Volume 104, Issue 1, Pages -

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AMER INST PHYSICS
DOI: 10.1063/1.2949258

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Ion implantation of Ti into Si at high doses has been performed. After laser annealing the maximum average of substitutional Ti atoms is about 10(18) cm(-3). Hall effect measurements show n-type samples with mobility values of about 400 cm(2)/V s at room temperature. These results clearly indicate that Ti solid solubility limit in Si has been exceeded by far without the formation of a titanium silicide layer. This is a promising result toward obtaining of an intermediate band into Si that allows the design of a new generation of high efficiency solar cell using Ti implanted Si wafers. (C) 2008 American Institute of Physics.

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