InGaN metal-semiconductor-metal photodetectors with triethylgallium precursor and unactivated Mg-doped GaN cap layers

Density functional theory predictions for blue luminescence and nonlinear optical properties of carbon-doped gallium nitride

(2010) XiaoLin Hu et al.   JOURNAL OF SOLID STATE CHEMISTRY

Characterisation of GaN–In x Ga1−x N quantum-well lasers

(2009) K. Melouk et al.   APPLIED PHYSICS B-LASERS AND OPTICS

High efficiency GaN-based light-emitting diodes fabricated on dielectric mask-embedded structures

(2009) J. W. Lee et al.   APPLIED PHYSICS LETTERS

Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers

(2009) Yen-Kuang Kuo et al.   APPLIED PHYSICS LETTERS

Improved Performances of InGaN Schottky Photodetectors by Inducing a Thin Insulator Layer and Mesa Process

(2009) D.J. Chen et al.   IEEE ELECTRON DEVICE LETTERS

Optimization of InGaN–GaN MQW Photodetector Structures for High-Responsivity Performance

(2009) J. Pereiro et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

AlGaN/GaN Schottky Barrier UV Photodetectors With a GaN Sandwich Layer

(2009) K. H. Lee et al.   IEEE SENSORS JOURNAL

High quality GaN-based Schottky barrier diodes

(2008) K. H. Lee et al.   APPLIED PHYSICS LETTERS

c-erbB-2 sensing using AlGaN∕GaN high electron mobility transistors for breast cancer detection

(2008) K. H. Chen et al.   APPLIED PHYSICS LETTERS

High-performance visible-blind GaN-based p-i-n photodetectors

(2008) Bayram Butun et al.   APPLIED PHYSICS LETTERS

GaN-Based Schottky Barrier Photodetectors With a 12-Pair Mg$_{\rm x}$N$_{\rm y}$–GaN Buffer Layer

(2008) S. J. Chang et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS