4.6 Article

High efficiency GaN-based light-emitting diodes fabricated on dielectric mask-embedded structures

Journal

APPLIED PHYSICS LETTERS
Volume 95, Issue 1, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3166868

Keywords

-

Funding

  1. Korea Research Foundation
  2. Korean Government (MOEHRD) [KRF-2008-005-J00301]

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We report on the enhanced quantum efficiency of GaN-based light-emitting diodes (LEDs) fabricated on inverted hexagonal pyramid dielectric mask (IHPDM)-embedded structure. The ray-tracing calculation showed that the extraction efficiency of LEDs fabricated on IHPDM-embedded structure could be enhanced up to 56%. Compared to the reference, the n-GaN template grown on IHPDM-embedded structure also showed a reduction in the dislocation density by 57%, leading to an increase in photoluminescence intensity by 82%. The LED fabricated on IHPDM-embedded structure exhibited a reduction in the forward leakage current by one order of magnitude (<1.5 V) and an enhancement in the output power by 41%. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3166868]

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