Threshold voltage control of Pt-Ti-O gate Si-metal-insulator semiconductor field-effect transistors hydrogen gas sensors by using oxygen invasion into Ti layers

Published 2011 View Full Article

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Title
Threshold voltage control of Pt-Ti-O gate Si-metal-insulator semiconductor field-effect transistors hydrogen gas sensors by using oxygen invasion into Ti layers
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 110, Issue 7, Pages 074515
Publisher
AIP Publishing
Online
2011-10-15
DOI
10.1063/1.3645028
References
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