Air-Annealing Effects for Pt/Ti Gate Si-Metal–Oxide–Semiconductor Field-Effect Transistors Hydrogen Gas Sensor

Published 2010 View Full Article

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Title
Air-Annealing Effects for Pt/Ti Gate Si-Metal–Oxide–Semiconductor Field-Effect Transistors Hydrogen Gas Sensor
Authors
Keywords
-
Journal
Applied Physics Express
Volume 3, Issue 4, Pages 047201
Publisher
IOP Publishing
Online
2010-03-24
DOI
10.1143/apex.3.047201

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