Tunnel magnetoresistance properties and annealing stability in perpendicular anisotropy MgO-based magnetic tunnel junctions with different stack structures

Pd Layer Thickness Dependence of Tunnel Magnetoresistance Properties in CoFeB/MgO-Based Magnetic Tunnel Junctions with Perpendicular Anisotropy CoFe/Pd Multilayers

(2011) Kotaro Mizunuma et al.   Applied Physics Express

A 32-Mb SPRAM With 2T1R Memory Cell, Localized Bi-Directional Write Driver and `1'/`0' Dual-Array Equalized Reference Scheme

(2010) Riichiro Takemura et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

CoFeB Inserted Perpendicular Magnetic Tunnel Junctions with CoFe/Pd Multilayers for High Tunnel Magnetoresistance Ratio

(2010) Kotaro Mizunuma et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Transmission electron microscopy study on the crystallization and boron distribution of CoFeB/MgO/CoFeB magnetic tunnel junctions with various capping layers

(2009) Toyoo Miyajima et al.   APPLIED PHYSICS LETTERS

Lower-temperature crystallization of CoFeB in MgO magnetic tunnel junctions by using Ti capping layer

(2009) Takahiro Ibusuki et al.   APPLIED PHYSICS LETTERS

MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers

(2009) K. Mizunuma et al.   APPLIED PHYSICS LETTERS

Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions

(2008) Shoun Matsunaga et al.   Applied Physics Express

2 Mb SPRAM (SPin-Transfer Torque RAM) With Bit-by-Bit Bi-Directional Current Write and Parallelizing-Direction Current Read

(2008) Takayuki Kawahara et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

Improvement of Thermal Stability of Magnetoresistive Random Access Memory Device with SiN Protective Film Deposited by High-Density Plasma Chemical Vapor Deposition

(2008) Katsumi Suemitsu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS