Improvement of Thermal Stability of Magnetoresistive Random Access Memory Device with SiN Protective Film Deposited by High-Density Plasma Chemical Vapor Deposition

Published 2008 View Full Article

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Title
Improvement of Thermal Stability of Magnetoresistive Random Access Memory Device with SiN Protective Film Deposited by High-Density Plasma Chemical Vapor Deposition
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 47, Issue 4, Pages 2714-2718
Publisher
Japan Society of Applied Physics
Online
2008-04-25
DOI
10.1143/jjap.47.2714

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