Modeling of the steady state characteristics of large-area graphene field-effect transistors
Published 2011 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Modeling of the steady state characteristics of large-area graphene field-effect transistors
Authors
Keywords
-
Journal
JOURNAL OF APPLIED PHYSICS
Volume 110, Issue 3, Pages 034506
Publisher
AIP Publishing
Online
2011-08-06
DOI
10.1063/1.3606583
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Mobility and saturation velocity in graphene on SiO2
- (2010) Vincent E. Dorgan et al. APPLIED PHYSICS LETTERS
- Modeling of graphene metal-oxide-semiconductor field-effect transistors with gapless large-area graphene channels
- (2010) S. A. Thiele et al. JOURNAL OF APPLIED PHYSICS
- Top-Gated Graphene Nanoribbon Transistors with Ultrathin High-kDielectrics
- (2010) Lei Liao et al. NANO LETTERS
- Imaging, Simulation, and Electrostatic Control of Power Dissipation in Graphene Devices
- (2010) Myung-Ho Bae et al. NANO LETTERS
- High-speed graphene transistors with a self-aligned nanowire gate
- (2010) Lei Liao et al. NATURE
- Graphene transistors
- (2010) Frank Schwierz Nature Nanotechnology
- 100-GHz Transistors from Wafer-Scale Epitaxial Graphene
- (2010) Y.-M. Lin et al. SCIENCE
- Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition
- (2009) J. Kedzierski et al. IEEE ELECTRON DEVICE LETTERS
- Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates
- (2009) J.S. Moon et al. IEEE ELECTRON DEVICE LETTERS
- Dual-Gate Graphene FETs With $f_{T}$ of 50 GHz
- (2009) Yu-Ming Lin et al. IEEE ELECTRON DEVICE LETTERS
- Device model for graphene bilayer field-effect transistor
- (2009) V. Ryzhii et al. JOURNAL OF APPLIED PHYSICS
- A theory for the high-field current-carrying capacity of one-dimensional semiconductors
- (2009) Debdeep Jena JOURNAL OF APPLIED PHYSICS
- Velocity saturation in intrinsic graphene
- (2009) R S Shishir et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- Transport Properties of Graphene in the High-Current Limit
- (2009) Amelia Barreiro et al. PHYSICAL REVIEW LETTERS
- The electronic properties of graphene
- (2009) A. H. Castro Neto et al. REVIEWS OF MODERN PHYSICS
- Diffusive charge transport in graphene on SiO2
- (2009) J.-H. Chen et al. SOLID STATE COMMUNICATIONS
- Analysis of ballistic monolayer and bilayer graphene field-effect transistors
- (2008) Yijian Ouyang et al. APPLIED PHYSICS LETTERS
- Epitaxial Graphene Transistors on SiC Substrates
- (2008) Jakub Kedzierski et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Electron transport and full-band electron-phonon interactions in graphene
- (2008) Akin Akturk et al. JOURNAL OF APPLIED PHYSICS
- Current saturation in zero-bandgap, top-gated graphene field-effect transistors
- (2008) Inanc Meric et al. Nature Nanotechnology
- Intrinsic and extrinsic performance limits of graphene devices on SiO2
- (2008) Jian-Hao Chen et al. Nature Nanotechnology
- Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
- (2008) S. V. Morozov et al. PHYSICAL REVIEW LETTERS
- Room-Temperature All-Semiconducting Sub-10-nm Graphene Nanoribbon Field-Effect Transistors
- (2008) Xinran Wang et al. PHYSICAL REVIEW LETTERS
- Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors
- (2008) X. Li et al. SCIENCE
Add your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload NowCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now