Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study

Published 2009 View Full Article

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Title
Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 56, Issue 7, Pages 1388-1395
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2009-06-03
DOI
10.1109/ted.2009.2021357

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