Fast and slow carrier recombination transients in highly excited 4H– and 3C–SiC crystals at room temperature

Published 2010 View Full Article

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Title
Fast and slow carrier recombination transients in highly excited 4H– and 3C–SiC crystals at room temperature
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 108, Issue 2, Pages 023705
Publisher
AIP Publishing
Online
2010-07-28
DOI
10.1063/1.3459894
References
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