Journal
JOURNAL OF APPLIED PHYSICS
Volume 107, Issue 10, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3373419
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- Ministry of Education, Culture, Sports, Science, and Technology, Japan [20760016]
- Grants-in-Aid for Scientific Research [20760016] Funding Source: KAKEN
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Atomistic structures of the Ge2Sb2Te5 thin film in the real phase-change disk have been investigated using transmission electron microscopy (TEM). As-deposited amorphous Ge2Sb2Te5 films were laser-irradiated for initialization (crystallization) and recording. Cross-sectional TEM observations revealed that the recording mark was fully amorphized by laser irradiation. A slight difference between the as-deposited and the laser irradiation-induced amorphous Ge2Sb2Te5 was observed in the intensity profile of nanobeam electron diffraction patterns and atomic pair distribution functions. This difference was attributed to structural relaxation of amorphous Ge2Sb2Te5, which gives rise to the alteration of chemical order. (C) 2010 American Institute of Physics. [doi:10.1063/1.3373419]
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