Direct observations of Ge2Sb2Te5 recording marks in the phase-change disk

Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part I: Experimental Study

(2009) Daniele Ielmini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5

(2009) M. Boniardi et al.   JOURNAL OF APPLIED PHYSICS

Formation of Large Voids in the Amorphous Phase-Change MemoryGe2Sb2Te5Alloy

(2009) Zhimei Sun et al.   PHYSICAL REVIEW LETTERS

Nature of Atomic Bonding and Atomic Structure in the Phase-ChangeGe2Sb2Te5Glass

(2009) M. Xu et al.   PHYSICAL REVIEW LETTERS

Observation of the Role of Subcritical Nuclei in Crystallization of a Glassy Solid

(2009) B.-S. Lee et al.   SCIENCE

Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te5

(2008) D. Ielmini et al.   APPLIED PHYSICS LETTERS

Microscopic origin of the fast crystallization ability of Ge–Sb–Te phase-change memory materials

(2008) J. Hegedüs et al.   NATURE MATERIALS