Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties

Study of interfacial reactions and phase stabilization of mixed Sc, Dy, Hf high-k oxides by attenuated total reflectance infrared spectroscopy

(2009) A. Hardy et al.   APPLIED SURFACE SCIENCE

Scaling the MOSFET gate dielectric: From high-k to higher-k? (Invited Paper)

(2009) Martin M. Frank et al.   MICROELECTRONIC ENGINEERING

High-k dielectrics for future generation memory devices (Invited Paper)

(2009) J.A. Kittl et al.   MICROELECTRONIC ENGINEERING

Direct comparison of the electrical properties in metal/oxide/nitride/oxide/silicon and metal/aluminum oxide/nitride/oxide/silicon capacitors with equivalent oxide thicknesses

(2009) Ho-Myoung An et al.   THIN SOLID FILMS

Experimental measurement of the elastic constants of GdScO3 via resonant ultrasound spectroscopy utilizing ab initio calculations

(2008) K. A. Pestka et al.   APPLIED PHYSICS LETTERS

Thermal stability of dysprosium scandate thin films

(2008) C. Adelmann et al.   APPLIED PHYSICS LETTERS

Physical properties of high pressure reactively sputtered hafnium oxide

(2008) M. Toledano-Luque et al.   VACUUM