Growth of InN on Si (111) by atmospheric-pressure metal-organic chemical vapor deposition using InN∕AlN double-buffer layers

Published 2008 View Full Article

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Title
Growth of InN on Si (111) by atmospheric-pressure metal-organic chemical vapor deposition using InN∕AlN double-buffer layers
Authors
Keywords
-
Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Volume 26, Issue 4, Pages 587-591
Publisher
American Vacuum Society
Online
2008-09-18
DOI
10.1116/1.2929849

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