Temperature and doping dependencies of electrical properties in Al-doped 4H-SiC epitaxial layers

Published 2009 View Full Article

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Title
Temperature and doping dependencies of electrical properties in Al-doped 4H-SiC epitaxial layers
Authors
Keywords
-
Journal
JOURNAL OF APPLIED PHYSICS
Volume 106, Issue 1, Pages 013716
Publisher
AIP Publishing
Online
2009-07-14
DOI
10.1063/1.3158565

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