The Route for Ultra-High Recording Density Using Probe-Based Data Storage Device
Published 2015 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
The Route for Ultra-High Recording Density Using Probe-Based Data Storage Device
Authors
Keywords
-
Journal
NANO
Volume 10, Issue 08, Pages 1550118
Publisher
World Scientific Pub Co Pte Lt
Online
2015-07-21
DOI
10.1142/s1793292015501180
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Overview of emerging memristor families from resistive memristor to spintronic memristor
- (2015) Lei Wang et al. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
- The next generation mass storage devices – Physical principles and current status
- (2014) L. Wang et al. CONTEMPORARY PHYSICS
- Optimisation of readout performance of phase-change probe memory in terms of capping layer and probe tip
- (2014) Lei Wang et al. Electronic Materials Letters
- Fabrication and Characterization of FePt Exchange Coupled Composite and Graded Bit Patterned Media
- (2013) Hao Wang et al. IEEE TRANSACTIONS ON MAGNETICS
- HAMR Recording Limitations and Extendibility
- (2013) Xiaobin Wang et al. IEEE TRANSACTIONS ON MAGNETICS
- High-Speed and Precise Gap Servo System for Near-Field Optical Recording
- (2013) Daiichi Koide et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Review of Emerging New Solid-State Non-Volatile Memories
- (2013) Yoshihisa Fujisaki JAPANESE JOURNAL OF APPLIED PHYSICS
- Crystallization of Ge2Sb2Te5 films by amplified femtosecond optical pulses
- (2013) Y. Liu et al. JOURNAL OF APPLIED PHYSICS
- Terabit-per-square-inch scanning probe phase-change memory model based on nucleation-growth theory
- (2013) Lei Wang et al. MATERIALS LETTERS
- 2-bit operation based on modulated Fowler-Nordheim tunneling in charge-trapping flash memory cell
- (2012) Min-Feng Hung et al. APPLIED PHYSICS LETTERS
- A 19 nm 112.8 mm$^{2}$ 64 Gb Multi-Level Flash Memory With 400 Mbit/sec/pin 1.8 V Toggle Mode Interface
- (2012) Kazushige Kanda et al. IEEE JOURNAL OF SOLID-STATE CIRCUITS
- Areal density limitation in bit-patterned, heat-assisted magnetic recording using FePtX media
- (2012) Terry W. McDaniel JOURNAL OF APPLIED PHYSICS
- Near-field optical recording with nanocomposite cover-layer for numerical aperture of 1.85
- (2012) Jin-Hong Kim et al. JOURNAL OF MODERN OPTICS
- Brief History of ETOX™ NOR Flash Memory
- (2012) Stefan K. Lai JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Future Prospects of NAND Flash Memory Technology—The Evolution from Floating Gate to Charge Trapping to 3D Stacking
- (2012) Chih-Yuan Lu JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Ferroelectricity in hafnium oxide thin films
- (2011) T. S. Böscke et al. APPLIED PHYSICS LETTERS
- Scanning probe memories – Technology and applications
- (2011) C. David Wright et al. CURRENT APPLIED PHYSICS
- Prospect of Recording Technologies for Higher Storage Performance
- (2011) Kyoung-Su Park et al. IEEE TRANSACTIONS ON MAGNETICS
- Dynamics of laser-induced phase switching in GeTe films
- (2011) W. Gawelda et al. JOURNAL OF APPLIED PHYSICS
- High-density magnetoresistive random access memory operating at ultralow voltage at room temperature
- (2011) Jia-Mian Hu et al. Nature Communications
- Write strategies for multiterabit per square inch scanned-probe phase-change memories
- (2010) C. D. Wright et al. APPLIED PHYSICS LETTERS
- Flash memories: Successes and challenges
- (2010) S. K. Lai IBM JOURNAL OF RESEARCH AND DEVELOPMENT
- Perspectives of Read Head Technology for 10 Tb/in$^{2}$ Recording
- (2010) G. C. Han et al. IEEE TRANSACTIONS ON MAGNETICS
- The Design of Rewritable Ultrahigh Density Scanning-Probe Phase-Change Memories
- (2010) C. David. Wright et al. IEEE TRANSACTIONS ON NANOTECHNOLOGY
- Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400°C
- (2010) J.-L. Battaglia et al. JOURNAL OF APPLIED PHYSICS
- Perpendicular magnetic recording—Its development and realization
- (2010) Shun-ichi Iwasaki JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
- Ultralow nanoscale wear through atom-by-atom attrition in silicon-containing diamond-like carbon
- (2010) Harish Bhaskaran et al. Nature Nanotechnology
- Inducing chalcogenide phase change with ultra-narrow carbon nanotube heaters
- (2009) Feng Xiong et al. APPLIED PHYSICS LETTERS
- Thermal Boundary Resistance Measurements for Phase-Change Memory Devices
- (2009) J.P. Reifenberg et al. IEEE ELECTRON DEVICE LETTERS
- Nanoscale phase transformation in Ge2Sb2Te5 using encapsulated scanning probes and retraction force microscopy
- (2009) Harish Bhaskaran et al. REVIEW OF SCIENTIFIC INSTRUMENTS
- Thermal conductivity of ultrathin tetrahedral amorphous carbon films
- (2008) A. A. Balandin et al. APPLIED PHYSICS LETTERS
- Nanoscale PtSi Tips for Conducting Probe Technologies
- (2008) H. Bhaskaran et al. IEEE TRANSACTIONS ON NANOTECHNOLOGY
- Threshold switching and phase transition numerical models for phase change memory simulations
- (2008) A. Redaelli et al. JOURNAL OF APPLIED PHYSICS
- The future of phase-change semiconductor memory devices
- (2008) Stephen J. Hudgens JOURNAL OF NON-CRYSTALLINE SOLIDS
- Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses
- (2008) Daniele Ielmini PHYSICAL REVIEW B
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started