Power electronics with wide bandgap materials: Toward greener, more efficient technologies

SiC—Emerging Power Device Technology for Next-Generation Electrically Powered Environmentally Friendly Vehicles

(2015) Kimimori Hamada et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High-Performance, Wide-Bandgap Power Electronics

(2014) Ty McNutt et al.   JOURNAL OF ELECTRONIC MATERIALS

1.4-kV AlGaN/GaN HEMTs on a GaN-on-SOI Platform

(2013) Qimeng Jiang et al.   IEEE ELECTRON DEVICE LETTERS

Design and Implementation of a High-Efficiency Multiple-Output Resonant Converter for Induction Heating Applications Featuring Wide Bandgap Devices

(2013) Hector Sarnago et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN

(2013) Hiroshi Amano   JAPANESE JOURNAL OF APPLIED PHYSICS

Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications

(2011) St.G. Müller et al.   JOURNAL OF CRYSTAL GROWTH

Silicon Substrate Removal of GaN DHFETs for Enhanced (

(2010) Puneet Srivastava et al.   IEEE ELECTRON DEVICE LETTERS

Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

(2009) Q. Dai et al.   APPLIED PHYSICS LETTERS

Design and Performance of a 200-kHz All-SiC JFET Current DC-Link Back-to-Back Converter

(2009) T. Friedli et al.   IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS

Effect of GaN Buffer Layer Growth Pressure on the Device Characteristics of AlGaN/GaN High-Electron-Mobility Transistors on Si

(2009) Josephine Selvaraj et al.   JAPANESE JOURNAL OF APPLIED PHYSICS